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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD241C/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. * Collector-Emitter Saturation Voltage -- VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min.) BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C * High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package BD241C* PNP BD242B BD242C* *Motorola Preferred Device NPN MAXIMUM RATINGS 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80, 100 VOLTS 40 WATTS PD, POWER DISSIPATION (WATTS) II I I II IIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II II I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII Rating Symbol VCEO VCES VEB IC IB BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage 5.0 3.0 5.0 1.0 Collector Current -- Continuous Peak Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 40 0.32 Watts W/_C TJ, Tstg - 65 to + 150 _C CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol RJA Max Unit Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case 62.5 _C/W _C/W RJC 3.125 40 30 20 10 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. (c) Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII BD241C BD242B BD242C 1 Pulse Test: Pulse Width 2 fT = |hfe| * ftest. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS1 OFF CHARACTERISTICS Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) Current Gain - Bandwidth Product2 (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 600 Adc) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector-Emitter Sustaining Voltage1 (IC = 30 mAdc, IB = 0) APPROX + 11 V Vin 0 TURN-ON PULSE v 300 s, Duty Cycle v 2.0%. Characteristic VCC Vin Cjd % Ceb RK RL SCOPE t, TIME ( s) VEB(off) 2 APPROX + 11 V Figure 2. Switching Time Equivalent Circuit Vin t2 TURN-OFF PULSE t1 t3 DUTY CYCLE 2.0% APPROX - 9.0 V t1 7.0 ns 100 t2 500 s t3 15 ns v tt t [ - 4.0 V BD241C, BD242B, BD242C BD242B BD241C, BD242C BD242B BD241C, BD242C 0.03 0.02 0.03 0.07 0.05 0.1 0.3 0.7 0.5 1.0 2.0 Motorola Bipolar Power Transistor Device Data 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) tr @ VCC = 10 V VCE(sat) VBE(on) Symbol VCEO ICEO IEBO ICES hFE hfe fT tr @ VCC = 30 V Min. 80 100 3.0 20 25 10 td @ VBE(off) = 2.0 V Max. 200 200 1.8 1.2 1.0 0.3 IC/IB = 10 TJ = 25C Figure 3. Turn-On Time mAdc mAdc Adc MHz Unit Vdc Vdc Vdc 3.0 BD241C BD242B BD242C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 0.05 0.02 P(pk) ZJC (t) = r(t) RJC RJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k D = 0.5 0.2 Figure 4. Thermal Response VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 5.0 5.0 ms 2.0 1.0 0.5 SECOND BREAKDOWN LIMITED @ TJ 150C THERMAL LIMITATION @ TC = 25C BONDING WIRE LIMITED 1.0 ms 100 s v 0.2 0.1 5.0 CURVES APPLY BELOW RATED VCEO BD242B BD241C, BD242C 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 10 20 50 IC, COLLECTOR CURRENT (AMP) Figure 5. Active Region Safe Operating Area 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.03 ts tf @ VCC = 30 V IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C CAPACITANCE (pF) 300 TJ = + 25C 200 t, TIME ( s) 100 Ceb 70 50 Ccb tf @ VCC = 10 V 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 30 40 Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 BD241C BD242B BD242C 500 300 hFE, DC CURRENT GAIN TJ = 150C 25C - 55C VCE = 2.0 V VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 100 70 50 30 1.2 IC = 0.3 A 1.0 A 3.0 A 0.8 10 7.0 5.0 0.03 0.4 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 0 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 TJ = 25C + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 VB FOR VBE *VC FOR VCE(sat) *APPLIES FOR IC/IB 5.0 TJ = - 65C TO + 150C 0 0.003 0.005 0.01 0.020.03 0.05 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 103 IC, COLLECTOR CURRENT ( A) 102 101 100 10-1 REVERSE 10- 2 25C ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 FORWARD VCE = 30 V TJ = 150C 100C RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 107 IC = 10 x ICES 106 105 104 103 102 VCE = 30 V IC ICES IC = 2 x ICES (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 10- 3 - 0.4 - 0.3 - 0.2 - 0.1 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance 4 Motorola Bipolar Power Transistor Device Data BD241C BD242B BD242C PACKAGE DIMENSIONS -T- C T 4 SEATING PLANE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J BASE COLLECTOR EMITTER COLLECTOR CASE 221A-09 TO-220AB ISSUE Z Motorola Bipolar Power Transistor Device Data 5 BD241C BD242B BD242C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 6 Motorola Bipolar Power Transistor Device BD241C/D Data |
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